BCR192U
Dec-13-2001
1
PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
1
=22k
, R
2
=47k
)
VPW09197
1
2
3
4
5
6
EHA07173
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Type
Marking
Pin Configuration
Package
BCR192U
WPs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
50
V
V
CEO
50
Collector-base voltage
V
CBO
10
V
EBO
Emitter-base voltage
Input on Voltage
V
i(on)
30
100
mA
DC collector current
I
C
mW
P
tot
250
Total power dissipation
,
T
S
= 118 C
Junction temperature
150
C
T
j
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
130
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCR192U
Dec-13-2001
2
Electrical Characteristics
at T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
V
(BR)CBO
50
-
-
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter cutoff current
V
EB
= 10 V,
I
C
= 0
I
EBO
-
-
227
A
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
h
FE
70
-
-
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 A,
V
CE
= 5 V
V
i(off)
0.5
-
1.2
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
0.8
-
2.5
Input resistor
R
1
15
22
29
k
Resistor ratio
R
1
/R
2
0.42
0.47
0.52 -
AC Characteristics
-
200
-
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
MHz
-
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
3
-
pF
C
cb
1) Pulse test: t < 300
s; D < 2%
BCR192U
Dec-13-2001
3
Collector-Emitter Saturation Voltage
V
CEsat
= f (I
C
), h
FE
= 20
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
DC Current Gain
h
FE
= f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Input on Voltage
V
i(on)
= f (I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off)
= f (I
C
)
V
CE
= 5V (common emitter configuration)
0.0
0.5
1.0
1.5
V
2.5
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
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